APTMC60TLM55CT3AG parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Microchip

Model:

APTMC60TLM55CT3AG

Description:

MOSFET 4N-CH 1200V 55A SP3F

Stock:

2115

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$97.52

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Parameters

Current at 25 ° C - continuous drain (Id)

48A(Tc)

Drain source voltage (Vdss)

1200V(1.2kV)

FET Type

4 N channels(Three stage inverter)

FET function

SiC

Gate charge (Qg) at different Vgs (maximum)

98nC @ 20V

Input capacitance at different Vds (Ciss) (maximum)

1900pF @ 1000V

On resistance (maximum) for different Ids and Vgs

49 mΩ @ 40A,20V

Power - maximum

250W

Vgs (th) (maximum) for different Ids

2.2V @ 2mA(standard)

packing

bulk

series

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

SP3

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Base installation

Part status

On sale

DataSheet

APTMC60TLM55CT3AG（FET, MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory2115,Price reference "real-time change" China/Hongkong。 APTMC60TLM55CT3AG package/specs, Download APTMC60TLM55CT3AG、Datasheet。